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QST7
Transistors
Low frequency amplifier
QST7
!Application Low frequency amplifier Driver !External dimensions (Units : mm)
2.8 1.6
(1)
Each lead has same dimensions
Abbreviated symbol : T07
!Equivalent circuit !Absolute maximum ratings (Ta=25C)
Symbol VCBO VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICP PC Power dissipation Junction temperature Tj Range of storage temperature Tstg
1 Single pulse, PW=1ms 2 Each Terminal Mounted on a Recommended
Parameter Collector-base voltage
Limits -30 -30 -6 -1.5 -3 500 150 -55~+150
Unit V V V A A1 mW 2 C C
(6)
(5)
(4)
(1)
(2)
(3)
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. -30 -30 -6 - - - 270 - -
Typ. - - - - - -200 - 280 13
Max. - - - -100 -100 -370 680 - -
Unit V V V nA nA mV - MHz pF
Conditions IC=-10A IC=-1mA IE=-10A VCB=-30V VEB=-6V IC=-1A, IB=-50mA VCE=-2V, IC=-100mA VCE=-2V, IE=100mA, f=100MHz VCB=-10V, IE=0A, f=1MHz
0.85
!Features 1) A collector current is large. 2) VCE(sat) -370mV At IC =- 1A / IB = -50mA
(4) (5) (6)
0.4
0.16
(3) (2)
2.9
1/2
QST7
Transistors
!Packaging specifications
Package Type Code Basic ordering unit (pieces) QST7 Taping TR 3000
!Electrical characteristic curves
Ta=100C
VCE=-2V Pulsed
BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000
1
10
Ta=25C
Pulsed 1
DC CURRENT GAIN : hFE
Ta=25C Ta=-40C
VBE(sat)
Ta=-40C Ta=25C Ta=100C
100
0.1
0.1
IC/IB=50/1 IC/IB=10/1 IC/IB=20/1
VCE(sat)
Ta=100C Ta=25C Ta=-40C
0.01
10 0.001
0.01
0.1
1
10
0.01 0.001
IC/IB=20/1 Pulsed 0.01 0.1 1 10
0.001 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current
1000
TRANSITION FREQUENCY : fT (MHz)
Fig.3 Collector-emitter saturation voltage vs. collector current
1
COLLECTOR CURRENT : IC (A)
VCE=-2V Pulsed
Ta=25C VCE=-2V f=100MHz
1000
Ta=25C tstg
VCE=-5V IC/IB=20/1
0.1
Ta=100C
Ta=25C Ta=-40C
SWITCHING TIME : (ns)
100
tf
100
tdon
0.01
10
tr
0.001 0
0.5
1
1.5
10 0.01
0.1
1
10
1 0.01
0.1
1
10
BASE TO EMITTER CURRENT : VBE (V)
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC (A)
Fig.4 Grounded emitter propagation characteristics
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
Fig.5 Gain bandwidth product vs. emitter current
Fig.6 Switching time
Ta=25C IC=0A f=1MHz
100 Cib
Cob 10
1 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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